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http://www.informationweek.com/news/internet/showArticle.jhtml?articleID=207200184
http://www.informationweek.com/news/internet/showArticle.jhtml?articleID=207200184
IBM's goal, based on spintronic patents filed as early as 2004, is to use the same square micron that currently houses a single SRAM memory bit, or 10 flash bits, and drill down into the third dimension to store spin-polarized bits on a sunken racetrack-shaped magnetic nanowire. Using an area of silicon 1 micron wide and 10 microns high, IBM said its first-generation racetrack would store 10 bits compared to one, thereby replacing flash memory. Eventually, it could store 100 bits in the same area, which is dense enough to replace hard-disk drives.
"Racetrack is essentially the third turn of the crank of this new field of engineering called spintronics," said Parkin. "In current solid-state memory devices you store and control the flow of electrical charge. Here, we store and control the flow of the spin of an electron."